مشخصات مقاله | |
ترجمه عنوان مقاله | طراحی و تجزیه و تحلیل عملکرد تونل FET مدوله شده دی الکتریک بر اساس بیوسنسور بدون برچسب |
عنوان انگلیسی مقاله | Design and Performance Analysis of Dielectrically Modulated Doping-less Tunnel FET based Label Free Biosensor |
انتشار | مقاله سال 2019 |
تعداد صفحات مقاله انگلیسی | 6 صفحه |
هزینه | دانلود مقاله انگلیسی رایگان میباشد. |
پایگاه داده | نشریه IEEE |
مقاله بیس | این مقاله بیس نمیباشد |
نمایه (index) | JCR – Master Journal List – Scopus |
نوع مقاله | ISI |
فرمت مقاله انگلیسی | |
ایمپکت فاکتور(IF) |
3.779 در سال 2018 |
شاخص H_index | 100 در سال 2019 |
شاخص SJR | 0.726 در سال 2018 |
شناسه ISSN | 1530-437X |
شاخص Quartile (چارک) | Q1 در سال 2018 |
مدل مفهومی | ندارد |
پرسشنامه | ندارد |
متغیر | ندارد |
رفرنس | دارد |
رشته های مرتبط | مهندسی برق، شیمی |
گرایش های مرتبط | الکترونیک، مهندسی کنترل، شیمی کاربردی، شیمی فیزیک |
نوع ارائه مقاله |
ژورنال |
مجله | مجله سنسورها – Sensors Journal |
دانشگاه | Sunny Anand Department of Electronics and Communication Engineering, Amity University, Noida, India |
کلمات کلیدی | شارژ پلاسما، تونل FET مدوله شده دی الکتریک، بیوسنسور، حساسیت بیومولکول |
کلمات کلیدی انگلیسی | Charge plasma، Dielectric Modulation Tunnel FET، Biosensor، Biomolecule Sensitivity |
شناسه دیجیتال – doi |
https://doi.org/10.1109/JSEN.2019.2900092 |
کد محصول | E12747 |
وضعیت ترجمه مقاله | ترجمه آماده این مقاله موجود نمیباشد. میتوانید از طریق دکمه پایین سفارش دهید. |
دانلود رایگان مقاله | دانلود رایگان مقاله انگلیسی |
سفارش ترجمه این مقاله | سفارش ترجمه این مقاله |
فهرست مطالب مقاله: |
Abstract
I- Introduction II- Device Structure III- Results And Discussions IV- Conclusion References |
بخشی از متن مقاله: |
Abstract In this work, we have proposed a charge plasma based doping less double gated tunnel FET (DLDGTFET) based biosensor using dielectric modulation with a cavity introduced at the source side for the label free sensing of the biomolecules. These biomolecules are immobilized in the cavity region to induce drain current. The sensing of the biomolecules is based on the drain current of the device while the drain current is based on the dielectric constant and the interfacing charges of the biomolecules. The cavity length is varied between 25 nm and 30 nm and different dielectric constants have been used. The expansion of the cavity length results in slight reduction of the drain current due to lowering of the capacitance. Higher dielectric constants result in better drain current values which leads to an increase in the sensitivity of the device. The maximum sensitivity attained was as high as 1.0×1010. As compared to other transistors, DLDGTFET provides better sensitivity as a biosensor and also the leakage current is low. INTRODUCTION LATELY, the field of biosensors has been growing due to its wide range of applications ranging from medical [1] to environmental and agricultural fields. Biosensors based on FETs have been studied due to their various advantages such as low cost and their ability to detect charged biomolecules. FET-based biosensors were popular due to their performance in label-free detection of the biomolecules [2]. Despite being a low cost device, FET based biosensor did not had much applications due to their inability of detecting neutral charged particles. Later on, the dielectrically modulated FET based biosensors were imported to detect both charged and noncharged biomolecules [3]. A cavity was introduced under the gate to immobilize the biomolecules and determine the outcome on the basis of dielectric constant and drain current [4]. The immobilization of the biomolecules causes the electrical parameters to modulate and form a biosensor. However, it has some drawbacks such as scaling, power supply, short channel effects (SCEs) [5, 6], etc. |