مشخصات مقاله | |
ترجمه عنوان مقاله | جداسازی خسارت در ترانزیستور پیوندی دو قطبی همراه پرتوافشانی با پروتونهای 250 مگا الکترون ولت |
عنوان انگلیسی مقاله | Damage Separation in a Bipolar Junction Transistor following Irradiation with 250-MeV Protons |
انتشار | مقاله سال 2019 |
تعداد صفحات مقاله انگلیسی | 6 صفحه |
هزینه | دانلود مقاله انگلیسی رایگان میباشد. |
پایگاه داده | نشریه IEEE |
مقاله بیس | این مقاله بیس نمیباشد |
نمایه (index) | JCR – Master Journal List – Scopus |
نوع مقاله | ISI |
فرمت مقاله انگلیسی | |
ایمپکت فاکتور(IF) |
1.735 در سال 2018 |
شاخص H_index | 110 در سال 2019 |
شاخص SJR | 0.570 در سال 2018 |
شناسه ISSN | 0018-9499 |
شاخص Quartile (چارک) | Q2 در سال 2018 |
مدل مفهومی | ندارد |
پرسشنامه | ندارد |
متغیر | ندارد |
رفرنس | دارد |
رشته های مرتبط | برق |
گرایش های مرتبط | الکترونیک، الکترونیک قدرت، ماشین های الکتریکی، مخابرات میدان و موج، افزاره های میکرو و نانو الکترونیک |
نوع ارائه مقاله |
ژورنال |
مجله | نتایج بدست آمده در حوزه علوم هسته ای – Transactions on Nuclear Science |
دانشگاه | Northrop Grumman Corporation, Linthicum Heights, MD, USA |
شناسه دیجیتال – doi |
https://doi.org/10.1109/TNS.2019.2904911 |
کد محصول | E13238 |
وضعیت ترجمه مقاله | ترجمه آماده این مقاله موجود نمیباشد. میتوانید از طریق دکمه پایین سفارش دهید. |
دانلود رایگان مقاله | دانلود رایگان مقاله انگلیسی |
سفارش ترجمه این مقاله | سفارش ترجمه این مقاله |
فهرست مطالب مقاله: |
Abstract
I- Introduction II- Experiment III- Parametric Degradation IV- Mechanisms V- Source Dependence VI- Implications VII- Summary VIII- Acknowledgment References |
بخشی از متن مقاله: |
Abstract Irradiation of 2N5339 NPN Bipolar Junction Transistors with either 250-MeV protons or 10-keV X-rays shifts the input characteristics to lower values of VBE while degrading the current gain and drive current. The degradation is consistent with increased recombination in the neutral base and emitterbase depletion region. A decrease in collector current following proton irradiation suggests that recombination in the neutral base is significant. At a given ionizing dose, degradation is worse for proton irradiation than for X-ray irradiation due to the presence of displacement damage and a higher charge yield. A comparison of degradation produced by the two radiation sources suggests that ~40% of the excess base current resulting from 250-MeV proton irradiation is due to ionization damage. When compared with previous results for other devices, these results suggest that ionization-to-displacement damage ratios in bipolar devices may increase with proton energy in a way that is consistent with trends in charge yield and NIEL. INTRODUCTION THE current gain of bipolar junction transistors is important in satellite amplification applications such as radio transmitters and RF power generation [1]. Energetic protons in space degrade bipolar current gain by producing both ionization damage in the oxide overlying the emitter-base (E-B) junction and displacement damage in the semiconductor bulk [2]. In contrast, 10-keV X-rays produce only ionization damage, since the secondary electrons that they produce have energies below the displacement damage threshold [3]. Consistent with an approach for damage separation outlined in ASTM E1855-15 [4], Arutt, et al. have estimated the contributions of ionization damage to 4-MeV proton-induced degradation of bipolar devices from several technologies by comparing the proton responses to those of 10-keV X-rays [5], [6]. To date, however, ratios of ionization damage and displacement damage at larger proton energies, characteristic of radiation environments in low-earth orbits [7], have not been examined. In this work, the portion of proton-induced degradation due to ionization damage is estimated for a commercial bipolar transistor following irradiation with 250-MeV protons. The amount of ionization damage at the larger proton energy is greater than that reported for 4-MeV protons by a factor of more than two, suggesting that ionization-to-displacement damage ratios in bipolar devices may depend strongly on proton energy. The trend in damage ratios is consistent with the dependencies of charge yield and NIEL on proton energy. Mechanisms leading to current gain degradation through increased base recombination are reviewed. Differences in degradation due to radiation source type are related to the relative amounts of ionization damage and displacement damage accumulated in each case. Finally, implications for using proton irradiation to screen bipolar devices for displacement damage are discussed. |